APT35GP120B2D2G product image

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Product details

APT35GP120B2D2G

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT PT 1200 V 96 A 540 W Through Hole T-MAX™ [B2]

Datasheet Not provided

Specifications

Base Product Number: APT35GP120
Current - Collector (Ic) (Max): 96 A
Current - Collector Pulsed (Icm): 140 A
Gate Charge: 150 nC
IGBT Type: PT
Input Type: Standard
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3 Variant
Power - Max: 540 W
Reverse Recovery Time (trr): 85 ns
Series: POWER MOS 7®
Supplier Device Package: T-MAX™ [B2]
Switching Energy: 1mJ (on), 1.185mJ (off)
Td (on/off) @ 25°C: 14ns/99ns
Test Condition: 800V, 35A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max): 1200 V