APT10M11LVRG product image

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Product details

APT10M11LVRG

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 100 V 100A (Tc) 520W (Tc) Through Hole TO-264 (L)

Datasheet Not provided

Specifications

Base Product Number: APT10M11
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-264-3, TO-264AA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V
Series: POWER MOS V®
Supplier Device Package: TO-264 (L)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 2.5mA