Diodes Incorporated
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Product details
DTA115EEBMGTL
Availability on request
Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount EMT3F (SOT-416FL)
Datasheet
Not provided
Specifications
- Base Product Number
- DTA115
- Current - Collector (Ic) (Max)
- 100 mA
- Current - Collector Cutoff (Max)
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 82 @ 5mA, 5V
- Frequency - Transition
- 250 MHz
- Mfr
- Rohm Semiconductor
- Mounting Type
- Surface Mount
- Package
- Tape & Reel (TR)
- Package / Case
- SC-89, SOT-490
- Power - Max
- 150 mW
- Resistor - Base (R1)
- 100 kOhms
- Resistor - Emitter Base (R2)
- 100 kOhms
- Series
- DTA115E
- Supplier Device Package
- EMT3F (SOT-416FL)
- Transistor Type
- PNP - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V