2N7000,126 product image

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Product details

2N7000,126

Availability on request

Manufacturer: NXP USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Box (TB)

Description

N-Channel 60 V 300mA (Tc) 830mW (Ta) Through Hole TO-92-3

Datasheet Not provided

Specifications

Base Product Number: 2N70
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Mfr: NXP USA Inc.
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power Dissipation (Max): 830mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Series: TrenchMOS™
Supplier Device Package: TO-92-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 2V @ 1mA