IPG20N06S2L-35AATMA1 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

IPG20N06S2L-35AATMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Arrays
Package: Bulk

Description

Mosfet Array 2 N-Channel (Dual) 55V 20A (Tc) 65W (Tc) Surface Mount, Wettable Flank PG-TDSON-8-10

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 55V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Mfr: Infineon Technologies
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: 8-PowerVDFN
Power - Max: 65W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Series: OptiMOS®
Supplier Device Package: PG-TDSON-8-10
Vgs(th) (Max) @ Id: 2V @ 27µA