BSP296L6433 product image

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Product details

BSP296L6433

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 100 V 1.1A (Ta) 1.79W (Ta) Surface Mount PG-SOT223

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-261-4, TO-261AA
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Series: SIPMOS®
Supplier Device Package: PG-SOT223
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 1.8V @ 400µA