BSC200P03LSG product image

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Product details

BSC200P03LSG

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

P-Channel 30 V 9.9A (Ta), 12.5A (Tc) 2.5W (Ta), 63W (Tc) Surface Mount PG-TDSON-8-6

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 12.5A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: 8-PowerTDFN
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.5A, 10V
Series: OptiMOS®
Supplier Device Package: PG-TDSON-8-6
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 1V @ 100µA