BSC042NE7NS3 G product image

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Product details

BSC042NE7NS3 G

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 75 V 19A (Ta), 132A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 132A (Tc)
Drain to Source Voltage (Vdss): 75 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 37.5 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: 8-PowerTDFN
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Series: OptiMOS™ 3
Supplier Device Package: PG-TDSON-8-1
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.8V @ 91µA