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Product details

PDTB143EQA147

Availability on request

Manufacturer: NXP USA Inc.
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Bulk

Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 150 MHz 325 mW Surface Mount DFN1010D-3

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 500 mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 150 MHz
Mfr: NXP USA Inc.
Mounting Type: Surface Mount
Package: Bulk
Package / Case: 3-XDFN Exposed Pad
Power - Max: 325 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Series: PDTB143
Supplier Device Package: DFN1010D-3
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50 V