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Product details

BCR 521 E6327

Availability on request

Manufacturer
Infineon Technologies
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Package
Bulk

Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 100 MHz 330 mW Surface Mount PG-SOT23-3-3

Specifications
Current - Collector (Ic) (Max)
500 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 50mA, 5V
Frequency - Transition
100 MHz
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Package
Bulk
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
330 mW
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
1 kOhms
Series
Automotive, AEC-Q101
Supplier Device Package
PG-SOT23-3-3
Transistor Type
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
50 V