BSC886N03LS G product image

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Product details

BSC886N03LS G

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 30 V 13A (Ta), 65A (Tc) 2.5W (Ta), 39W (Tc) Surface Mount PG-TDSON-8

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 65A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: 8-PowerTDFN
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Series: OptiMOS™3
Supplier Device Package: PG-TDSON-8
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.2V @ 250µA