BSP322PL6327 product image

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Product details

BSP322PL6327

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

P-Channel 100 V 1A (Tc) 1.8W (Ta) Surface Mount PG-SOT223-4-21

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-261-4, TO-261AA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V
Series: SIPMOS®
Supplier Device Package: PG-SOT223-4-21
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 1V @ 380µA