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BDC01DRL1 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

BDC01DRL1

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
Bulk

Description

Bipolar (BJT) Transistor NPN 100 V 500 mA 50MHz 1 W Through Hole TO-92 (TO-226)

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
500 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 100mA, 1V
Frequency - Transition
50MHz
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Bulk
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Power - Max
1 W
Series
-
Supplier Device Package
TO-92 (TO-226)
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
700mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
100 V

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