HGT1S12N60B3 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

HGT1S12N60B3

Availability on request

Manufacturer: Harris Corporation
Category: Transistors - IGBTs - Single
Package: Bulk

Description

IGBT 600 V 27 A 104 W Through Hole I2PAK (TO-262)

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 27 A
Current - Collector Pulsed (Icm): 110 A
Gate Charge: 68 nC
IGBT Type: -
Input Type: Standard
Mfr: Harris Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power - Max: 104 W
Series: -
Supplier Device Package: I2PAK (TO-262)
Switching Energy: 304µJ (on), 250µJ (off)
Td (on/off) @ 25°C: 26ns/150ns
Test Condition: 480V, 12A, 25Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Voltage - Collector Emitter Breakdown (Max): 600 V