BCR583E6327 product image

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Product details

BCR583E6327

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Bulk

Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 150 MHz 330 mW Surface Mount PG-SOT23-3-1

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 500 mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 150 MHz
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Package: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 330 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Series: Automotive, AEC-Q101
Supplier Device Package: PG-SOT23-3-1
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50 V