UF3C120040K3S product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

UF3C120040K3S

Availability on request

Manufacturer: UnitedSiC
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 1200 V 65A (Tc) 429W (Tc) Through Hole TO-247-3

Datasheet View datasheet

Specifications

Base Product Number: UF3C120040
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 12V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Mfr: UnitedSiC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Series: -
Supplier Device Package: TO-247-3
Technology: SiCFET (Cascode SiCJFET)
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 6V @ 10mA