2N6057 product image

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Product details

2N6057

Availability on request

Manufacturer: NTE Electronics, Inc
Category: Transistors - Bipolar (BJT) - Single
Package: Bag

Description

Bipolar (BJT) Transistor NPN - Darlington 60 V 12 A 4MHz 150 W Through Hole TO-3

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 12 A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Frequency - Transition: 4MHz
Mfr: NTE Electronics, Inc
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bag
Package / Case: TO-204AA, TO-3
Power - Max: 150 W
Series: -
Supplier Device Package: TO-3
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Voltage - Collector Emitter Breakdown (Max): 60 V