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Product details

2N6123

Availability on request

Manufacturer: NTE Electronics, Inc
Category: Transistors - Bipolar (BJT) - Single
Package: Bag

Description

Bipolar (BJT) Transistor NPN 80 V 4 A 2.5MHz 40 W Through Hole TO-220

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 4 A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2.5MHz
Mfr: NTE Electronics, Inc
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Package: Bag
Package / Case: TO-220-3
Power - Max: 40 W
Series: -
Supplier Device Package: TO-220
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max): 80 V