2N3792 product image

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Product details

2N3792

Availability on request

Manufacturer: NTE Electronics, Inc
Category: Transistors - Bipolar (BJT) - Single
Package: Bag

Description

Bipolar (BJT) Transistor PNP 80 V 10 A 150 W Through Hole TO-3

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 10 A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Frequency - Transition: -
Mfr: NTE Electronics, Inc
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bag
Package / Case: TO-204AA, TO-3
Power - Max: 150 W
Series: -
Supplier Device Package: TO-3
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max): 80 V