2N2925 product image

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Product details

2N2925

Availability on request

Manufacturer: NTE Electronics, Inc
Category: Transistors - Bipolar (BJT) - Single
Package: Bag

Description

Bipolar (BJT) Transistor NPN 25 V 100 mA 160MHz 360 mW Through Hole TO-92

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 100 mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 4.5V
Frequency - Transition: 160MHz
Mfr: NTE Electronics, Inc
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Power - Max: 360 mW
Series: -
Supplier Device Package: TO-92
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: -
Voltage - Collector Emitter Breakdown (Max): 25 V