2N2102 product image

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Product details

2N2102

Availability on request

Manufacturer: NTE Electronics, Inc
Category: Transistors - Bipolar (BJT) - Single
Package: Bag

Description

Bipolar (BJT) Transistor NPN 65 V 1 A 1 W Through Hole TO-39

Datasheet View datasheet

Specifications

Current - Collector (Ic) (Max): 1 A
Current - Collector Cutoff (Max): 2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: -
Mfr: NTE Electronics, Inc
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Package: Bag
Package / Case: TO-205AD, TO-39-3 Metal Can
Power - Max: 1 W
Series: -
Supplier Device Package: TO-39
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max): 65 V