2N1711 product image

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Product details

2N1711

Availability on request

Manufacturer: Solid State Inc.
Category: Transistors - Bipolar (BJT) - Single
Package: Box

Description

Bipolar (BJT) Transistor NPN 130 V 1 A 70MHz 800 mW Through Hole TO-39

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 1 A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 70MHz
Mfr: Solid State Inc.
Mounting Type: Through Hole
Operating Temperature: 200°C (TJ)
Package: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Power - Max: 800 mW
Series: -
Supplier Device Package: TO-39
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max): 130 V