PDTD123ES,126 product image

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Product details

PDTD123ES,126

Availability on request

Manufacturer: NXP USA Inc.
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Box (TB)

Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 500 mW Through Hole TO-92-3

Datasheet View datasheet

Specifications

Base Product Number: PDTD12
Current - Collector (Ic) (Max): 500 mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Mfr: NXP USA Inc.
Mounting Type: Through Hole
Package: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max: 500 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Series: -
Supplier Device Package: TO-92-3
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50 V