FQAF10N80 product image

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Product details

FQAF10N80

Availability on request

Manufacturer: Fairchild Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 800 V 6.7A (Tc) 113W (Tc) Through Hole TO-3PF

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Drain to Source Voltage (Vdss): 800 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Mfr: Fairchild Semiconductor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-3P-3 Full Pack
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.35A, 10V
Series: QFET®
Supplier Device Package: TO-3PF
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 250µA