AUIRFSL8408 product image

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Product details

AUIRFSL8408

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 40 V 195A (Tc) 294W (Tc) Through Hole TO-262

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drain to Source Voltage (Vdss): 40 V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Series: HEXFET®
Supplier Device Package: TO-262
Technology: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id: 3.9V @ 250µA