FQAF17P10 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

FQAF17P10

Availability on request

Manufacturer: Fairchild Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

P-Channel 100 V 12.4A (Tc) 56W (Tc) Through Hole TO-3PF

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Mfr: Fairchild Semiconductor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-3P-3 Full Pack
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 10V
Series: QFET®
Supplier Device Package: TO-3PF
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA