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2SK669-AC product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

2SK669-AC

Availability on request

Manufacturer
onsemi
Category
Transistors - FETs, MOSFETs - Single
Package
Box

Description

N-Channel 50 V 100mA (Ta) 200mW (Ta) Through Hole 3-SPA

Specifications
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)
Drain to Source Voltage (Vdss)
50 V
FET Feature
-
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
15 pF @ 10 V
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
125°C (TJ)
Package
Box
Package / Case
3-SIP
Power Dissipation (Max)
200mW (Ta)
Rds On (Max) @ Id, Vgs
20Ohm @ 10mA, 10V
Series
-
Supplier Device Package
3-SPA
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
-