BSC112N06LDATMA1 product image

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Product details

BSC112N06LDATMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

Mosfet Array 2 N-Channel (Dual) 60V 20A (Tc) 65W (Tc) Surface Mount PG-TDSON-8-4

Datasheet View datasheet

Specifications

Base Product Number: BSC112
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-PowerVDFN
Power - Max: 65W (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Series: OptiMOS™-T2
Supplier Device Package: PG-TDSON-8-4
Vgs(th) (Max) @ Id: 2.2V @ 28µA