BSS192PE6327T product image

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Product details

BSS192PE6327T

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT)

Description

P-Channel 250 V 190mA (Ta) 1W (Ta) Surface Mount PG-SOT89

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Drain to Source Voltage (Vdss): 250 V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT)
Package / Case: TO-243AA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Series: SIPMOS®
Supplier Device Package: PG-SOT89
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 130µA