BSP123E6327T product image

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Product details

BSP123E6327T

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT)

Description

N-Channel 100 V 370mA (Ta) 1.79W (Ta) Surface Mount PG-SOT223-4

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 370mA, 10V
Series: SIPMOS®
Supplier Device Package: PG-SOT223-4
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 1.8V @ 50µA