FGL60N100BNTD product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

FGL60N100BNTD

Availability on request

Manufacturer: onsemi
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT NPT and Trench 1000 V 60 A 180 W Through Hole TO-264-3

Datasheet View datasheet

Specifications

Base Product Number: FGL60N100
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 120 A
Gate Charge: 275 nC
IGBT Type: NPT and Trench
Input Type: Standard
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-264-3, TO-264AA
Power - Max: 180 W
Reverse Recovery Time (trr): 1.2 µs
Series: -
Supplier Device Package: TO-264-3
Switching Energy: -
Td (on/off) @ 25°C: 140ns/630ns
Test Condition: 600V, 60A, 51Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Voltage - Collector Emitter Breakdown (Max): 1000 V