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HGTG5N120BND product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

HGTG5N120BND

Availability on request

Manufacturer
onsemi
Category
Transistors - IGBTs - Single
Package
Tube

Description

IGBT NPT 1200 V 21 A 167 W Through Hole TO-247-3

Specifications
Base Product Number
HGTG5N120
Current - Collector (Ic) (Max)
21 A
Current - Collector Pulsed (Icm)
40 A
Gate Charge
53 nC
IGBT Type
NPT
Input Type
Standard
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Package / Case
TO-247-3
Power - Max
167 W
Reverse Recovery Time (trr)
65 ns
Series
-
Supplier Device Package
TO-247-3
Switching Energy
450µJ (on), 390µJ (off)
Td (on/off) @ 25°C
22ns/160ns
Test Condition
960V, 5A, 25Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 5A
Voltage - Collector Emitter Breakdown (Max)
1200 V