HGT1S10N120BNST product image

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Product details

HGT1S10N120BNST

Availability on request

Manufacturer: onsemi
Category: Transistors - IGBTs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

IGBT NPT 1200 V 35 A 298 W Surface Mount D²PAK (TO-263)

Datasheet View datasheet

Specifications

Base Product Number: HGT1S10
Current - Collector (Ic) (Max): 35 A
Current - Collector Pulsed (Icm): 80 A
Gate Charge: 100 nC
IGBT Type: NPT
Input Type: Standard
Mfr: onsemi
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max: 298 W
Series: -
Supplier Device Package: D²PAK (TO-263)
Switching Energy: 320µJ (on), 800µJ (off)
Td (on/off) @ 25°C: 23ns/165ns
Test Condition: 960V, 10A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Voltage - Collector Emitter Breakdown (Max): 1200 V