HGTP10N120BN product image

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Product details

HGTP10N120BN

Availability on request

Manufacturer: onsemi
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT NPT 1200 V 35 A 298 W Through Hole TO-220-3

Datasheet View datasheet

Specifications

Base Product Number: HGTP10
Current - Collector (Ic) (Max): 35 A
Current - Collector Pulsed (Icm): 80 A
Gate Charge: 100 nC
IGBT Type: NPT
Input Type: Standard
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power - Max: 298 W
Series: -
Supplier Device Package: TO-220-3
Switching Energy: 320µJ (on), 800µJ (off)
Td (on/off) @ 25°C: 23ns/165ns
Test Condition: 960V, 10A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Voltage - Collector Emitter Breakdown (Max): 1200 V