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FQA8N90C product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

FQA8N90C

Availability on request

Manufacturer
onsemi
Category
Transistors - FETs, MOSFETs - Single
Package
Tube

Description

N-Channel 900 V 8A (Tc) 240W (Tc) Through Hole TO-3P

Datasheet Not provided
Specifications
Base Product Number
FQA8
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drain to Source Voltage (Vdss)
900 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2080 pF @ 25 V
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Package / Case
TO-3P-3, SC-65-3
Power Dissipation (Max)
240W (Tc)
Rds On (Max) @ Id, Vgs
1.9Ohm @ 4A, 10V
Series
QFET®
Supplier Device Package
TO-3P
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±30V
Vgs(th) (Max) @ Id
5V @ 250µA