HGT1S2N120CN product image

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Product details

HGT1S2N120CN

Availability on request

Manufacturer: onsemi
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT NPT 1200 V 13 A 104 W Through Hole TO-262

Datasheet Not provided

Specifications

Base Product Number: HGT1S2N120
Current - Collector (Ic) (Max): 13 A
Current - Collector Pulsed (Icm): 20 A
Gate Charge: 30 nC
IGBT Type: NPT
Input Type: Standard
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power - Max: 104 W
Series: -
Supplier Device Package: TO-262
Switching Energy: 96µJ (on), 355µJ (off)
Td (on/off) @ 25°C: 25ns/205ns
Test Condition: 960V, 2.6A, 51Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
Voltage - Collector Emitter Breakdown (Max): 1200 V