FQB10N60CTM product image

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Product details

FQB10N60CTM

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 600 V 9.5A (Tc) 3.13W (Ta), 156W (Tc) Surface Mount D²PAK (TO-263)

Datasheet Not provided

Specifications

Base Product Number: FQB1
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Mfr: onsemi
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 3.13W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.75A, 10V
Series: QFET®
Supplier Device Package: D²PAK (TO-263)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA