FQB1N60TM product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

FQB1N60TM

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 600 V 1.2A (Tc) 3.13W (Ta), 40W (Tc) Surface Mount D²PAK (TO-263)

Datasheet Not provided

Specifications

Base Product Number: FQB1
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Mfr: onsemi
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 3.13W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 600mA, 10V
Series: QFET®
Supplier Device Package: D²PAK (TO-263)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 250µA