DMT12H090LFDF4-13 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

DMT12H090LFDF4-13

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 115 V 3.4A (Ta) 900mW (Ta) Surface Mount X2-DFN2020-6

Datasheet View datasheet

Specifications

Base Product Number: DMT12
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 115 V
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 50 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 6-PowerXDFN
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 10V
Series: -
Supplier Device Package: X2-DFN2020-6
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 2.2V @ 250µA