DMT67M8LCGQ-7 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

DMT67M8LCGQ-7

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 60 V 16A (Ta), 64.6A (Tc) 900mW (Tc) Surface Mount V-DFN3333-8 (Type B)

Datasheet View datasheet

Specifications

Base Product Number: DMT67
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 64.6A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Power Dissipation (Max): 900mW (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Series: Automotive, AEC-Q101
Supplier Device Package: V-DFN3333-8 (Type B)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA