FJN4308RTA product image

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Product details

FJN4308RTA

Availability on request

Manufacturer: onsemi
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Box (TB)

Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92-3

Datasheet Not provided

Specifications

Base Product Number: FJN430
Current - Collector (Ic) (Max): 100 mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 200 MHz
Mfr: onsemi
Mounting Type: Through Hole
Package: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max: 300 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Series: -
Supplier Device Package: TO-92-3
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50 V