ES6U3T2CR product image

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Product details

ES6U3T2CR

Availability on request

Manufacturer: Rohm Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 30 V 1.4A (Ta) 800mW (Ta) Surface Mount 6-WEMT

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
FET Feature: Schottky Diode (Isolated)
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 10 V
Mfr: Rohm Semiconductor
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Series: -
Supplier Device Package: 6-WEMT
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 1mA